STFU15NM65N datasheet(4/12 Pages) STMICROELECTRONICS

4 / 12 page

Electrical characteristics

STFU15NM65N

4/12

DocID027631 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0 V

650

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

µA

VDS = 650 V, TC = 125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±100

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 6 A

0.35

0.38

Ω

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0 V

983

Coss

Output capacitance

Crss

Reverse transfer

capacitance

4.5

Coss eq.(1)

Equivalent output

capacitance

VDS = 0 to 520 V, VGS = 0 V

146

Intrinsic gate resistance

f = 1 MHz open drain

4.9

Ω

Total gate charge

VDD = 520 V, ID = 12 A,

VGS = 10 V

33.3

Qgs

Gate-source charge

5.7

Qgd

Gate-drain charge

Notes:

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 6 A,

RG = 4.7

Ω, VGS = 10 V

55.5

Rise time

8.5

td(off)

Turn-off delay time

Fall time

11.4

STFU15NM65N Datasheet(PDF) 4 Page - STMicroelectronics

STFU15NM65N Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL