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STFU15NM65N Datasheet(PDF) 3 Page - STMicroelectronics

Part # STFU15NM65N
Description  N-channel 650 V, 0.35 Ω typ., 12 A MDmesh™ II Power MOSFET in a TO-220FP ultra narrow leads package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFU15NM65N Datasheet(HTML) 3 Page - STMicroelectronics

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STFU15NM65N
Electrical ratings
DocID027631 Rev 2
3/12
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain source voltage
650
V
VGS
Gate source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
12(1)
A
Drain current (continuous) at TC = 100 °C
7.56
IDM(2)
Drain current (pulsed)
48
A
PTOT
Total dissipation at TC = 25 °C
30
W
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; TC = 25 °C)
2500
V
dv/dt (3)
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature
- 55 to 150
°C
Tj
Operating junction temperature
Notes:
(1)Limited by maximum junction temperature.
(2)Pulse width limited by safe operating area.
(3)ISD ≤ 12 A, di/dt ≤ 400 A/µs; VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
4.17
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
3
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR; VDD = 50 V)
187
mJ



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