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STFU15NM65N Datasheet(PDF) 5 Page - STMicroelectronics

Part # STFU15NM65N
Description  N-channel 650 V, 0.35 Ω typ., 12 A MDmesh™ II Power MOSFET in a TO-220FP ultra narrow leads package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFU15NM65N Datasheet(HTML) 5 Page - STMicroelectronics

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STFU15NM65N
Electrical characteristics
DocID027631 Rev 2
5/12
Table 8: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
12
A
ISDM(1)
Source-drain current
(pulsed)
-
48
A
VSD(2)
Forward on voltage
ISD = 12 A, VGS = 0 V
-
1.6
V
trr
Reverse recovery time
ISD = 12 A, di/dt = 100 A/µs,
VDD = 60 V
-
428
ns
Qrr
Reverse recovery charge
-
4.7
µC
IRRM
Reverse recovery current
-
21.5
A
trr
Reverse recovery time
ISD = 12 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
-
570
ns
Qrr
Reverse recovery charge
-
6.2
µC
IRRM
Reverse recovery current
-
22
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.



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