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M69KB096AB Datasheet(PDF) 40 Page - STMicroelectronics |
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M69KB096AB Datasheet(HTML) 40 Page - STMicroelectronics |
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40 / 73 page ![]() 9 DC and AC parameters M69KB096AB 40/73 Table 16. DC Characteristics Symbol Parameter Refreshed Array Test Conditions Min. Typ Max. Unit VOH (1) 1. BCR5-BCR4 = 01 (default settings). Output High Voltage IOH = –0.2mA 0.8VCCQ V VOL (1) Output Low Voltage IOL = 0.2mA 0.2VCCQ V VIH (2) 2. Input signals may overshoot to VCCQ+ 1.0V for periods of less than 2ns during transitions. Input High Voltage VCCQ −0.4 VCCQ + 0.2 V VIL (3) 3. Output signals may undershoot to VSS – 1.0V for periods of less than 2ns during transitions. Input Low Voltage −0.2 0.4 V ILI Input Leakage Current VIN = 0 to VCCQ 1µA ILO Output Leakage Current G = VIH or E = VIH 1µA ICC1 (4) 4. This parameter is specified with all outputs disabled to avoid external loading effects. The user must add the current required to drive output capacitance expected for the actual system. Asynchronous Read/Write Random at tRC min VIN = 0V or VCCQ, IOUT = 0mA, E = VIL 25 mA ICC2 (4) Asynchronous Page Read VIN = 0V or VCCQ IOUT = 0mA, E = VIL 15 mA ICC3 (4) Burst, Initial Read/Write Access VIN = 0V or VCCQ IOUT = 0mA, E = VIL 104MHz 35 mA 80MHz 30 mA ICC4R (4) Continuous Burst Read VIN = 0V or VCCQ IOUT = 0mA, E = VIL 104MHz 30 mA 80MHz 25 mA ICC4W (4) Continuous Burst Write VIN = 0V or VCCQ IOUT = 0mA, E = VIL 104MHz 35 mA 80MHz 30 mA IPASR (4) Partial Array Refresh Standby Current Full Array VIN = 0V or VCCQ E = VCCQ 140 µA 1/2 Array 120 µA 1/4 Array 110 µA 1/8 Array 105 µA None 95 µA ISB (5) 5. ISB maximum value is measured at +85°C with PAR set to Full Array. In order to achieve low standby current, all inputs must be driven either to VCCQ or VSSQ. ISB might be slightly higher for up to 500ms after Power-up, or when entering Standby mode. Standby Current VIN = 0V or VCCQ E = VCCQ 140 µA ICCPD Deep-Power Down Current VIN = 0V or VCCQ, VCC, VCCQ = 1.95V; TA= +85°C 310 µA |
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