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B2M080120R Datasheet(PDF) 5 Page - BASIC SEMICONDUCTOR |
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B2M080120R Datasheet(HTML) 5 Page - BASIC SEMICONDUCTOR |
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5 / 14 page ![]() SiC MOSFET 4 / 13 www.basicsemi.com Reverse Diode Characteristics Symbol Parameter Value Unit Min. Typ. Max. 4.6 3.9 32 11 80 110 16 V A A ns nC A Diode Forward Voltage Pulse Diode Current Continuous Diode Forward Current Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current V SD I SD I SD,pulse t rr Q rr I rrm Test conditions V DC=800V, ISD=20A -di F/dt=2500A/μs T j=25°C V GS=-4V, TC=25°C V GS=-4V, pulse width tp limited by T jmax 25 470 29 ns nC A Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current t rr Q rr I rrm V DC=800V, ISD=20A -di F/dt=3000A/μs T j=175°C V GS=-4V, ISD=10A, Tj=25°C V GS=-4V, ISD=10A, Tj=175°C Rev. 0.0 B2M080120R |
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