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B2M080120R Datasheet(PDF) 10 Page - BASIC SEMICONDUCTOR

Part # B2M080120R
Description  SiC MOSFET
PDF  14 Pages
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Manufacturer  BASICSEMI [BASIC SEMICONDUCTOR]
Direct Link  https://www.basicsemi.com/
Logo BASICSEMI - BASIC SEMICONDUCTOR

B2M080120R Datasheet(HTML) 10 Page - BASIC SEMICONDUCTOR

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Typical Performance
Clamped Inductive Switching Energy
vs. Drain Current (V
DC =600V)
at T
j=25°C
Figure 17
Clamped Inductive Switching Energy
vs. Drain Current (V
DC =600V)
at T
j=175°C
Figure 18
Clamped Inductive Switching Energy
vs. Drain Current (V
DC =800V)
at T
j=25°C
Clamped Inductive Switching Energy
vs. Drain Current (V
DC =800V)
at T
j=175°C
Figure 20
Figure 19
Rev. 0.0
10
15
20
25
30
35
40
0
200
400
600
800
1000
Eon
Eoff
Tj
= 25 ℃
VDC
= 600 V
RG(ext) = 2.2Ω
VGS
= -4V/+18V
FWD
= B2M080120R
Lσ
= 50nH
ID (A)
Etotal
10
15
20
25
30
35
40
0
200
400
600
800
1000
Eon
Eoff
Tj
= 175 ℃
VDC
= 600 V
RG(ext) = 2.2Ω
VGS
= -4V/+18V
FWD
= B2M080120R
Lσ
= 50nH
ID (A)
Etotal
10
15
20
25
30
35
40
0
200
400
600
800
1000
Eon
Eoff
Tj
= 25 ℃
VDC
= 800 V
RG(ext) = 2.2Ω
VGS
= -4V/+18V
FWD
= B2M080120R
Lσ
= 50nH
ID (A)
Etotal
10
15
20
25
30
35
40
0
200
400
600
800
1000
Eon
Eoff
Tj
= 175 ℃
VDC
= 800 V
RG(ext) = 2.2Ω
VGS
= -4V/+18V
FWD
= B2M080120R
Lσ
= 50nH
ID (A)
Etotal
B2M080120R



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