1995 Jul 07

7

Philips Semiconductors

Product specification

Low-voltage frequency synthesizer

for radio telephones

UMA1019AM

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is

desirable to take normal precautions appropriate to handling MOS devices.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

digital supply voltage

−0.3

+5.5

V

analog supply voltage

−0.3

+5.5

V

∆V

−0.3

+5.5

V

voltage at pins 1, 6, 8, 9, 11 to 14 and 20

−0.3

V

voltage at pins 2 and 3

−0.3

V

∆V

GND

difference in voltage between AGND and DGND (these

pins should be connected together)

−0.3

+0.3

V

total power dissipation

−

150

mW

storage temperature

−55

+125

°C

operating ambient temperature

−30

+85

°C

maximum junction temperature

−

95

°C

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to ambient in free air

120

K/W