STM32F050C4 datasheet(63/97 Pages) STMICROELECTRONICS

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STM32F050xx

Electrical characteristics

Doc ID 023683 Rev 1

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6.3.11

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the JESD22-A114/C101 standard.

Static latch-up

Two complementary static tests are required on six parts to assess the latch-up

performance:

●

A supply overvoltage is applied to each power supply pin

●

A current injection is applied to each input, output and configurable I/O pin

These tests are compliant with EIA/JESD 78A IC latch-up standard.

6.3.12

I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or

above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product

operation. However, in order to give an indication of the robustness of the microcontroller in

cases when abnormal injection accidentally happens, susceptibility tests are performed on a

sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting

current into the I/O pins programmed in floating input mode. While current is injected into the

I/O pin, one at a time, the device is checked for functional failures.

The failure is indicated by an out of range parameter: ADC error above a certain limit (more

than 5 LSB TUE), out of conventional limits of current injection on adjacent pins (more than

–5 µA) or other functional failure (reset occurrence or oscillator frequency deviation, for

example).

Table 42.

ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class Maximum value(1)

Data based on characterization results, not tested in production.

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA = +25 °C, conforming

to JESD22-A114

22000

VESD(CDM)

Electrostatic discharge

voltage (charge device model)

TA = +25 °C, conforming

to JESD22-C101

500

Table 43.

Electrical sensitivities

Symbol

Parameter

Conditions

Class

Static latch-up class

TA = +105 °C conforming to JESD78A

II level A

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