STM32F050C4 datasheet(41/97 Pages) STMICROELECTRONICS

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STM32F050xx

Electrical characteristics

Doc ID 023683 Rev 1

41/97

6.3.4

Embedded reference voltage

The parameters given in Table 19 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 15: General operating

conditions.

VPVD5

PVD threshold 5

Rising edge

2.57

2.68

2.79

Falling edge

2.47

2.58

2.69

VPVD6

PVD threshold 6

Rising edge

2.66

2.78

2.9

Falling edge

2.56

2.68

2.8

VPVD7

PVD threshold 7

Rising edge

2.76

2.88

Falling edge

2.66

2.78

2.9

VPVDhyst

(2)

PVD hysteresis

100

IDD(PVD)

PVD current consumption

0.15

0.26

µA

Data based on characterization results only, not tested in production.

Guaranteed by design, not tested in production.

Table 18.

Programmable voltage detector characteristics (continued)

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1)

Unit

Table 19.

Embedded internal reference voltage

Symbol

Parameter

Conditions

Min Typ

Max

Unit

VREFINT

Internal reference voltage

–40 °C < TA < +105 °C 1.16 1.2

1.25

–40 °C < TA < +85 °C

1.16 1.2 1.24(1)

Data based on characterization results, not tested in production.

TS_vrefint

(2)

Shortest sampling time can be determined in the application by multiple iterations.

ADC sampling time when

reading the internal

reference voltage

5.1

17.1(3)

Guaranteed by design, not tested in production.

µs

ΔVREFINT

Internal reference voltage

spread over the

temperature range

VDDA = 3 V ±10 mV

10(3)

TCoeff

Temperature coefficient

100(3) ppm/°C

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