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SI5341 Datasheet(PDF) 24 Page - Silicon Laboratories |
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SI5341 Datasheet(HTML) 24 Page - Silicon Laboratories |
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24 / 53 page ![]() Parameter Symbol Test Condition Min Typ Max Units Notes: 1. Output amplitude and common-mode settings are programmable through register settings and can be stored in NVM. Each out- put driver can be programmed independently. The maximum LVDS single-ended amplitude can be up to 110 mV higher than the TIA/EIA-644 maximum. Refer to the Si5341/40 Family Reference Manual for more suggested output settings. Not all combina- tions of voltage amplitude and common mode voltages settings are possible. OUTxb OUTx Vpp_se Vpp_se Vpp_ diff = 2* Vpp_se Vcm Vcm 2. Measured for 156.25 MHz carrier frequency. 100 mVpp sinewave noise added to VDDO = 3.3 V and noise spur amplitude meas- ured. 3. Measured across two adjacent outputs, both in LVDS mode, with the victim running at 155.52 MHz and the aggressor at 156.25 MHz. Refer to application note, AN862: Optimizing Si534x Jitter Performance in Next Generation Internet Infrastructure Systems, guidance on crosstalk minimization. Table 5.6. LVCMOS Clock Output Specifications (VDD=1.8V ± 5%, VDDA=3.3V ± 5%, VDDO=1.8V ± 5%, 2.5V ± 5%, or 3.3V ± 5%, TA= -40 to 85°C) Parameter Symbol Test Condition Min Typ Max Units Output Frequency 0.0001 — 250 MHz Duty Cycle DC fOUT < 100 MHz 48 — 52 % 100 MHz < fOUT < 250 MHz 45 — 55 Output-to-Output Skew TSK Outputs on same MultiSynth. FOUT = 156.25 MHz — 30 140 ps Output Voltage High1, 2, 3 VOH VDDO = 3.3 V OUTx_CMOS_DRV=1 IOH = -10 mA VDDO x 0.85 — — V OUTx_CMOS_DRV=2 IOH = -12 mA — — OUTx_CMOS_DRV=3 IOH = -17 mA — — VDDO = 2.5 V OUTx_CMOS_DRV=1 IOH = -6 mA VDDO x 0.85 — — V OUTx_CMOS_DRV=2 IOH = -8 mA — — OUTx_CMOS_DRV=3 IOH = -11 mA — — VDDO = 1.8 V OUTx_CMOS_DRV=2 IOH = -4 mA VDDO x 0.85 — — V OUTx_CMOS_DRV=3 IOH = -5 mA — — Si5341/40 Rev D Data Sheet Electrical Specifications silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 23 |
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