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S29AS016J Datasheet(PDF) 46 Page - Cypress Semiconductor |
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S29AS016J Datasheet(HTML) 46 Page - Cypress Semiconductor |
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46 / 59 page ![]() Document Number: 002-01122 Rev.*L Page 46 of 59 S29AS016J 18.3 Word/Byte Configuration (BYTE#) Figure 18.3 BYTE# Timings for Read Operations Figure 18.4 BYTE# Timings for Write Operations Note Refer to the Erase/Program Operations table for tAS and tAH specifications. Parameter Speed Options JEDEC Std Description 70 Unit tELFL/tELFH CE# to BYTE# Switching Low or High Max 5 ns tFLQZ BYTE# Switching Low to Output High-Z Max 25 tFHQV BYTE# Switching High to Output Active Min 70 DQ15 Output Data Output (DQ0–DQ7) CE# OE# BYTE# tELFL DQ0–DQ14 Data Output (DQ0–DQ14) DQ15/A-1 Address Input tFLQZ BYTE# Switching from word to byte mode DQ15 Output Data Output (DQ0–DQ7) BYTE# tELFH DQ0–DQ14 Data Output (DQ0–DQ14) DQ15/A-1 Address Input tFHQV BYTE# Switching from byte to word mode CE# WE# BYTE# The falling edge of the last WE# signal tHOLD (tAH) tSET (tAS) |
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