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S29AS016J Datasheet(PDF) 47 Page - Cypress Semiconductor |
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S29AS016J Datasheet(HTML) 47 Page - Cypress Semiconductor |
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47 / 59 page  Document Number: 002-01122 Rev.*L Page 47 of 59 S29AS016J 18.4 Erase/Program Operations Notes 1. Not 100% tested. 2. See Erase and Programming Performance on page 53 for more information. Parameter Speed Options JEDEC Std Description 70 Unit tAVAV tWC Write Cycle Time (Note 1) Min 70 ns tAVWL tAS Address Setup Time 0 tWLAX tAH Address Hold Time 45 tDVWH tDS Data Setup Time 35 tWHDX tDH Data Hold Time 0 tOES Output Enable Setup Time 0 tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) 0 tELWL tCS CE# Setup Time 0 tWHEH tCH CE# Hold Time 0 tWLWH tWP Write Pulse Width 35 tWHWL tWPH Write Pulse Width High 20 tSR/W Latency Between Read and Write Operations Min 20 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Byte Typ 6 µs Word 6 tWHWH2 tWHWH2 Sector Erase Operation (Note 2) 0.5 sec tVCS VCC Setup Time (Note 1) Min 50 µs tRB Recovery Time from RY/BY# 0 ns tBUSY Program/Erase Valid to RY/BY# Delay Max 90 |
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