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AN880 Datasheet(PDF) 9 Page - STMicroelectronics

Part # AN880
Description  A NEW HIGH VOLTAGE IC DRIVER FOR ELECTRONIC LAMP BALLAST
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN880 Datasheet(HTML) 9 Page - STMicroelectronics

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line voltage VDC is applied when the oscillator
starts. The ballast has to start directly with its
nominal conditions to remove any transient oscil-
lation. Hence the operation runs in ZVS mode
with no spurious lamp ignition. This situation does
not occur with the saturable transformer drive, be-
cause the saturation limits naturally the current by
increasing the frequency.
In the example the resonant capacitors are pre-
set to be compatible with the choke current rise
(see figure 19). The blocking capacitor is pre-
charged to approximately half VDC by 2 biasing
resistors, and the lower Mosfet also discharges
the resonant capacitor to ground (see figure 20).
Therefore the blocking capacitor never goes
above 2/3 of the line voltage VDC (250V rating),
the operation is safe in ZVS mode. The L6569 is
here preferred to the L6569A, because the lower
Mosfet is on at power-up.
The lamp removal protection
Used in TL ballast, the lamp removal protection is
frequently also requested in the "plug-in" CFL bal-
last . Depending of the topology and the preheat
mode, the lamp removal behaves as:
- a noload resonant mode when the choke and
the capacitor are still connected to the in-
verter ; a required overcurrent protection in-
creases the frequency to reduce the current;
- an open circuit mode when the lamp filaments
are inserted in the resonant circuit.
When the circuit is open, the choke is not sup-
plied. The MOSFETs turn off slowly generating
bridge cross conduction, and undesirable dissipa-
tion losses (see figure 21). The detection stops
the switching to eliminate the cross conduction.
5
µs/dv ; 50 V/dv ; 0.5 A/dv
GND
GND
I I
VB
VBI
IDEAL INITIAL TIME
Figure 19: Waveforms of the choke current and
the capacitor voltages in steady state
preheat.
I I
VB
VBI
100 nF
4nF
ON
L6569
VS<UVLO
2.4 mH
2 x 180 k
Figure 20: Configuration of the resonant network during the initialization of the driver.
100 ns/dv ; 50 V/dv ; 5V/dv ; 1 A/dv
GND
VD
GND
GND
VGS
ID
ID= 2 A peak
Figure 21: Drain current and voltage STP8NA50
MOSFET operating with noload.
AN880 APPLICATION NOTE
9/14



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