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STE139N65M5 Datasheet(PDF) 7 Page - STMicroelectronics |
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STE139N65M5 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 13 page ![]() DocID025117 Rev 1 7/13 STE139N65M5 Electrical characteristics 13 Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Output capacitance stored energy Figure 13. Switching losses vs gate resistance (1) 1. Eon including reverse recovery of a SiC diode. VGS 6 4 2 0 0 100 Qg(nC) (V) 400 8 200 300 10 VDD=520V ID=65A 12 300 200 100 0 400 500 VDS (V) VDS AM12614v1 C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 10000 100 Ciss Coss Crss 100000 AM12615v1 VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 ID= 250µA AM08899v1 RDS(on) 1.7 1.3 0.9 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 2.1 ID = 65A VGS= 10V AM08900v1 Eoss 30 20 10 0 0 100 VDS(V) (µJ) 400 40 200 300 50 60 500 600 70 AM12616v1 E 3000 2000 1000 0 0 20 RG( Ω) ( μJ) 10 30 4000 5000 6000 40 ID=80A VDD=400V TJ=25°C Eon Eoff 7000 8000 AM12617v1 |
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