STE139N65M5 datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Electrical characteristics

STE139N65M5

4/13

DocID025117 Rev 1

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

650

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

VDS = 650 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on- resistance

VGS = 10 V, ID = 65 A

0.014

0.017

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

15600

Coss

Output capacitance

365

Crss

Reverse transfer

capacitance

-9

Co(tr)

(1)

Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0

to 80% VDSS.

Equivalent

capacitance time

VGS = 0, VDS = 0 to 520 V

1559

Co(er)

(2)

Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0

to 80% VDSS.

Equivalent

capacitance energy

VGS = 0, VDS = 0 to 520 V

360

Intrinsic gate

resistance

f = 1 MHz open drain

1.2

Total gate charge

VDD = 520 V, ID = 65 A,

VGS = 10 V

(see Figure 15)

-363

Qgs

Gate-source charge

Qgd

Gate-drain charge

164

STE139N65M5 Datasheet(PDF) 4 Page - STMicroelectronics

STE139N65M5 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL