STE139N65M5 datasheet(5/13 Pages) STMICROELECTRONICS

Part #	STE139N65M5

Description	N-channel 650 V, 0.014 (ohm) typ., 130 A, MDmesh V Power MOSFET in a ISOTOP package

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 13 page

DocID025117 Rev 1

5/13

STE139N65M5

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(v)

Voltage delay time

VDD = 400 V, ID = 80 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 16)

(see Figure 19)

-295

tr(v)

Voltage rise time

tf(i)

Current fall time

tc(off)

Crossing time

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

Source-drain current (pulsed)

130

520

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current (pulsed)

520

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 130 A, VGS = 0

1.5

trr

Reverse recovery time

ISD = 130 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 16)

570

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 130 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 16)

720

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

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