STE139N65M5 datasheet(3/13 Pages) STMICROELECTRONICS

Part #	STE139N65M5

Description	N-channel 650 V, 0.014 (ohm) typ., 130 A, MDmesh V Power MOSFET in a ISOTOP package

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 13 page

DocID025117 Rev 1

3/13

STE139N65M5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate- source voltage

± 25

Drain current (continuous) at TC = 25 °C

130

Drain current (continuous) at TC = 100 °C

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

520

PTOT

Total dissipation at TC = 25 °C

672

IAR

Max current during repetitive or single pulse avalanche

(pulse width limited by TJMAX)

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

2400

dv/dt(2)

ISD ≤ 130 A, di/dt = 400 A/µs, VDD = 400 V, VDS (peak) < V(BR)DSS.

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

0.186

°C/W

Rthj-amb Thermal resistance junction-ambient max

°C/W

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