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NL17SG373 Datasheet(PDF) 6 Page - ON Semiconductor

Part # NL17SG373
Description  Low-Power D-Type Low-Power D-Type
PDF  10 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NL17SG373 Datasheet(HTML) 6 Page - ON Semiconductor

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NL17SG373
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AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Unit
TA =
−55
5C to +1255C
TA = 25 5C
VCC (V)
Test Condition
Parameter
Symbol
Unit
Max
Min
Max
Typ
Min
VCC (V)
Test Condition
Parameter
CIN
Input Capacitance
0 to 3.6
1.5
pF
CO
Output Capacit-
ance
VO = GND
0
3
pF
CPD
Power dissipation
Capacitance
(Note 5)
f =10 MHz;
VI = GND to
VCC
0.9
1.6
pF
1.1 to 1.3
1.7
1.4 to 1.6
1.8
1.65 to
1.95
1.9
2.3 to 2.7
2.2
3.0 to 3.6
2.7
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no−load
dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC.
TIMING REQUIREMENTS (Input tr = tf = 3.0 ns; CL = 5 pF, 10 pF, 15 pF and 20 pF)
Symbol
Parameter
Test Condition
VCC (V)
TA = 25 5C
TA =
−55
5C to +1255C
Unit
Min
Typ
Max
Min
Max
tW
Pulse Width, LE
High
0.9
4.0
ns
1.1 to 1.3
0.7
2.1
1.4 to 1.6
0.5
1.3
1.65 to
1.95
0.4
1.0
2.3 to 2.7
0.3
0.8
3.0 to 3.6
0.2
0.8
tSU
Set−Up Time, D to LE
High or Low
0.9
2.1
ns
1.1 to 1.3
0.5
2.7
1.4 to 1.6
0.3
1.5
1.65 to
1.95
0.3
1.2
2.3 to 2.7
0.2
0.9
3.0 to 3.6
0.2
0.7
tH
Hold Time D to LE
High or Low
0.9
−2.8
ns
1.1 to 1.3
−0.7
−0.1
1.4 to 1.6
−0.4
−0.1
1.65 to
1.95
−0.4
0
2.3 to 2.7
−0.3
0.2
3.0 to 3.6
−0.4
0.3



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