AT45DB321D_12 datasheet(23/51 Pages) AD

23 / 51 page

AT45DB321D [DATASHEET]

3597R–DFLASH–11/2012

12.2

Operation Mode Summary

The commands described previously can be grouped into four different categories to make clearer which commands can be

executed at what times.

Group A commands consist of:

Main memory page read

Continuous array read

Read sector protection register

Read sector lockdown register

Read security register

Group B commands consist of:

Page erase

Block erase

Sector erase

Chip erase

Main memory page to buffer 1 (or 2) transfer

Main memory page to buffer 1 (or 2) compare

Buffer 1 (or 2) to main memory page program, with built-in erase

Buffer 1 (or 2) to main memory page program, without built-in erase

Main memory page program through buffer 1 (or 2)

10. Auto page rewrite

Group C commands consist of:

Buffer 1 (or 2) read

Buffer 1 (or 2) write

Status register read

Manufacturer and device ID read

Group D commands consist of:

Erase sector protection register

Program sector protection register

Sector lockdown

Program security register

If a group A command is in progress (not fully completed), then another command from group A, B, C, or D should not be

started. However, during the internally self-timed portion of group B commands, any command in group C can be executed. The

group B commands using buffer 1 should use group C commands using buffer 2, and vice versa. Finally, during the internally

self-timed portion of a group D command, only the status register read command should be executed.

AT45DB321D Datasheet(PDF) 23 Page - Analog Devices