UJA1069 datasheet(40/64 Pages) PHILIPS

40 / 64 page

UJA1069_2

Preliminary data sheet

Rev. 02 — 5 March 2007

40 of 64

NXP Semiconductors

UJA1069

LIN fail-safe system basis chip

Limiting values

[1]

Only relevant if VWAKE < VGND − 0.3 V; current will ﬂow into pin GND.

[2]

In accordance with IEC 60747-1. An alternative deﬁnition of virtual junction temperature is: Tvj =Tamb +Pd × Rth(vj-amb), where Rth(vj-amb)

is a ﬁxed value to be used for the calculation of Tvj. The rating for Tvj limits the allowable combinations of power dissipation (Pd) and

ambient temperature (Tamb).

[3]

Human Body Model (HBM): C = 100 pF; R = 1.5 k

Ω.

[4]

ESD performance according to IEC 61000-4-2 (C = 150 pF, R = 330

Ω) of pins LIN, RTLIN, WAKE, BAT42 and V3 with respect to GND

was veriﬁed by an external test house. Following results were obtained:

a) Equal or better than

±4 kV (unaided)

b) Equal or better than

±20 kV for pin LIN (using external ESD protection: NXP Semiconductors PESD1LIN diode)

[5]

Machine Model (MM): C = 200 pF; L = 0.75

µH; R = 10 Ω.

Table 24.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are referenced to GND.

Symbol

Parameter

Conditions

Min

Max

Unit

VBAT42

BAT42 supply voltage

−0.3

+60

load dump; t

≤ 500 ms

+60

VBAT14

BAT14 supply voltage

VBAT42 ≥ VBAT14 − 1V

continuous

−0.3

+33

load dump; t

≤ 500 ms

+45

VDC(n)

DC voltage on pins

−0.3

+5.5

V3 and SYSINH

−1.5

VBAT42 + 0.3

INH/LIMP

−0.3

VBAT42 + 0.3

SENSE

−0.3

VBAT42 + 1.2

WAKE

−1.5

+60

LIN and RTLIN

with respect to any other pin

−60

+60

TXDL, RXDL, SDO, SDI, SCK, SCS,

RSTN, INTN and EN

−0.3

VV1 + 0.3

TEST

−0.3

+15

Vtrt

transient voltage at pin LIN

in accordance with

ISO 7637-3

−150

+100

IWAKE

DC current at pin WAKE

[1]

−15

Tstg

storage temperature

−55

+150

°C

Tamb

ambient temperature

−40

+125

°C

Tvj

virtual junction temperature

[2]

−40

+150

°C

Vesd

electrostatic discharge voltage

HBM

[3]

at pins LIN, RTLIN,

WAKE, BAT42, V3,

SENSE; with respect to

GND

[4]

−8.0

+8.0

at any other pin

−2.0

+2.0

MM; at any pin

[5]

−200

+200

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