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PSD4235G2 Datasheet(PDF) 28 Page - STMicroelectronics |
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PSD4235G2 Datasheet(HTML) 28 Page - STMicroelectronics |
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28 / 89 page ![]() PSD4235G2 28/89 the CSIOP block) or use the Read Sector Protec- tion instruction. See Table 19 to Table 20. Reset The Reset instruction consists of one Write cycle (see Table 29). It can also be optionally preceded by the standard two write decoding cycles (writing AAh to AAAh, and 55h to 554h). The Reset instruction must be executed after: – Reading the Flash Protection Status or Flash ID – An Error condition has occurred (and the device has set the Error Flag (DQ5/DQ13) bit to 1) dur- ing a Flash memory Program or Erase cycle. The Reset instruction immediately puts the Flash memory back into normal Read mode. However, if there is an error condition (with the Error Flag (DQ5/DQ13) bit set to 1) the Flash memory will re- turn to the Read mode in 25 µs after the Reset in- struction is issued. The Reset instruction is ignored when it is issued during a Program or Bulk Erase cycle of the Flash memory. The Reset instruction aborts any on-go- ing Sector Erase cycle, and returns the Flash memory to the normal Read mode in 25 µs. Reset (RESET) Pin. A pulse on the Reset (RE- SET) pin aborts any cycle that is in progress, and resets the Flash memory to the Read mode. When the reset occurs during a Program or Erase cycle, the Flash memory takes up to 25 µs to return to the Read mode. It is recommended that the Reset (RESET) pulse (except for Power On Reset, as described on page 62) be at least 25 µs so that the Flash memory is always ready for the MCU to fetch the bootstrap instructions after the Reset cy- cle is complete. SRAM The SRAM is enabled when SRAM Select (RS0) from the DPLD is High. SRAM Select (RS0) can contain up to three product terms, allowing flexible memory mapping. The SRAM can be backed up using an external battery. The external battery should be connected to the Voltage Stand-by (VSTBY, PE6) line. If you have an external battery connected to the PSD, the contents of the SRAM are retained in the event of a power loss. The contents of the SRAM are re- tained so long as the battery voltage remains at 2 V or greater. If the supply voltage falls below the battery voltage, an internal power switch-over to the battery occurs. PE7 can be configured as an output that indicates when power is being drawn from the external bat- tery. This Battery-on Indicator (VBATON, PE7) signal is High when the supply voltage falls below the battery voltage and the battery on Voltage Stand-by (VSTBY, PE6) is supplying power to the internal SRAM. SRAM Select (RS0), Voltage Stand-by (VSTBY, PE6) and Battery-on Indicator (VBATON, PE7) are all configured using PSDsoft Express. Memory Select Signals The Primary Flash Memory Sector Select (FS0- FS7), Secondary Flash Memory Sector Select (CSBOOT0-CSBOOT3) and SRAM Select (RS0) signals are all outputs of the DPLD. They are de- fined using PSDsoft Express. The following rules apply to the equations for these signals: 1. Primary Flash memory and secondary Flash memory Sector Select signals must not be larg- er than the physical sector size. 2. Any primary Flash memory sector must not be mapped in the same memory space as another Flash memory sector. 3. A secondary Flash memory sector must not be mapped in the same memory space as another secondary Flash memory sector. 4. SRAM, I/O, and Peripheral I/O spaces must not overlap. 5. A secondary Flash memory sector may overlap a primary Flash memory sector. In case of over- lap, priority is given to the secondary Flash memory sector. 6. SRAM, I/O, and Peripheral I/O spaces may overlap any other memory sector. Priority is giv- en to the SRAM, I/O, or Peripheral I/O. Figure 8. Priority Level of Memory and I/O Components Example. FS0 is valid when the address is in the range of 8000h to BFFFh, CSBOOT0 is valid from 8000h to 9FFFh, and RS0 is valid from 8000h to 87FFh. Any address in the range of RS0 always accesses the SRAM. Any address in the range of CSBOOT0 greater than 87FFh (and less than 9FFFh) automatically addresses secondary Flash memory segment 0. Any address greater than 9FFFh accesses the primary Flash memory seg- Level 1 SRAM, I /O, or Peripheral I /O Level 2 Secondary Non-Volatile Memory Highest Priority Lowest Priority Level 3 Primary Flash Memory AI02867D |
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