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JS28F512P30TFA Datasheet(PDF) 74 Page - Micron Technology

Part # JS28F512P30TFA
Description  Numonyx Axcell P30-65nm Flash Memory
PDF  86 Pages
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Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology

JS28F512P30TFA Datasheet(HTML) 74 Page - Micron Technology

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P30-65nm
Datasheet
Apr 2010
74
Order Number: 208042-05
Figure 32: Buffer Program Flowchart
Start
Get Next
Target Address
Issue Write to Buffer
Command E8h
Block Address
Read Status Register
Block Address
(note 7)
Is WSM Ready ?
SR. 7=
1 = Yes
Device
Supports Buffer
Writes?
Set Timeout or
Loop Counter
Timeout
or Count
Expired ?
Write Confirm D0h
Block Address
Another Buffered
Programming?
Yes
No
No
Write Buffer Data
Start Address
X =0
Yes
0 = No
No
Yes
Use Single Word
Programming
Abort Bufferred
Program?
No
X =N?
Write Buffer Data
Block Address
X = X + 1
Write to another
Block Address
Buffered Program
Aborted
No
Yes
Yes
Write Word Count
Block Address
Notes:
1. Word count values on DQ 0-DQ15 are loaded into the Count
register. Count ranges for this device are N=0000h to 01FFh.
2. The device outputs the Status Register when read.
3. Write Buffer contents will be programmed at the device start
address or destination flash address .
4. Align the start address on a Write Buffer boundary for
maximum programming performance (i.e., A9-A1 of the start
address =0).
5. The device aborts the Buffered Program command if the
current address is outside the original block address .
6. The Status register indicates an “improper command
Sequence” if the Buffered Program command is aborted.
Follow this with a Clear Status Register command .
7. The device defaults to output SR data after the Buffered
Programming Setup Command (E8h) is issued . CE# or OE#
must be be toggled to update Status Register . Don’t issue the
Read SR command (70h), which would be interpreted by the
internal state machine as Buffer Word Count.
8. Full status check can be done after all erase and write
sequences complete . Write FFh after the last operation to
reset the device to read array mode.
.
.
.
Bus
Operation
Standby
Read
Command
Write
Write to
Buffer
Read
(Note 7)
Standby
Comments
Check SR.7
1 = WSM Ready
0 = WSM Busy
Status register Data
CE # and OE# low updates SR
Addr = Block Address
Data =E8H
Addr = Block Address
SR. 7 = Valid
Addr = Block Address
Check SR.7
1 = Device WSM is Busy
0 = Device WSM is Ready
Write
Program
Confirm
Data =D0H
Addr = Block Address
Write
( Notes1, 2)
Data =N- 1 = Word Count
N = 0 corresponds to count=1
Addr = Block Address
Write
( Notes3, 4)
Data = Write Buffer Data
Addr =Address within buffer range
Write
( Notes5, 6)
Data = Write Buffer Data
Addr = Block Address
Suspend
Program
Loop
Read Status Register
SR. 7=?
Full Status
Check if Desired
Program Complete
Suspend
Program
1
0
No
Yes



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