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MB9BF412R Datasheet(PDF) 58 Page - SPANSION

Part # MB9BF412R
Description  This document states the current technical specifications regarding
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MB9BF412R Datasheet(HTML) 58 Page - SPANSION

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D a t a S h e e t
March 11, 2015, MB9B410R-DS706-00026-3v0-E
55
CONFIDENTIAL
 C Pin
This series contains the regulator. Be sure to connect a smoothing capacitor (CS) for the
regulator between the C pin and the GND pin. Please use a ceramic capacitor or a capacitor
of equivalent frequency characteristics as a smoothing capacitor.
However, some laminated ceramic capacitors have the characteristics of capacitance variation
due to thermal fluctuation (F characteristics and Y5V characteristics). Please select the
capacitor that meets the specifications in the operating conditions to use by evaluating the
temperature characteristics of a capacitor.
A smoothing capacitor of about 4.7μF would be recommended for this series.
 Mode pins (MD0)
Connect the MD pin (MD0) directly to VCC or VSS pins. Design the printed circuit board such that the
pull-up/down resistance stays low, as well as the distance between the mode pins and VCC pins or VSS pins
is as short as possible and the connection impedance is low, when the pins are pulled-up/down such as for
switching the pin level and rewriting the Flash memory data. It is because of preventing the device
erroneously switching to test mode due to noise.
 Notes on power-on
Turn power on/off in the following order or at the same time.
If not using the A/D converter, connect AVCC = VCC and AVSS = VSS.
Turning on : VCC → AVCC → AVRH
Turning off : AVRH → AVCC → VCC
 Serial Communication
There is a possibility to receive wrong data due to the noise or other causes on the serial communication.
Therefore, design a printed circuit board so as to avoid noise.
Consider the case of receiving wrong data due to noise, perform error detection such as by applying a
checksum of data at the end. If an error is detected, retransmit the data.
 Differences in features among the products with different memory sizes and between Flash
products and MASK products
The electric characteristics including power consumption, ESD, latch-up, noise characteristics, and
oscillation characteristics among the products with different memory sizes and between Flash products and
MASK products are different because chip layout and memory structures are different.
If you are switching to use a different product of the same series, please make sure to evaluate the electric
characteristics.
 Pull-Up function of 5 V tolerant I/O
Please do not input the signal more than VCC voltage at the time of Pull-Up function use of 5 V tolerant
I/O.
Device
C
VSS
CS
GND



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