MB9BF412R datasheet(77/121 Pages) SPANSION

77 / 121 page

D a t a S h e e t

MB9B410R-DS706-00026-3v0-E, March 11, 2015

CONFIDENTIAL

(2) Sub Clock Input Characteristics

(VCC = 2.7V to 5.5V, VSS = 0V, TA = - 40°C to + 85°C)

Parameter

Symbol

name

Conditions

Value

Unit

Remarks

Min

Typ

Max

Input frequency

1/ tCYLL

X0A

X1A

32.768

kHz

When crystal

oscillator is

connected

100

kHz

When using

external clock

Input clock cycle

tCYLL

31.25

μs

When using

external clock

Input clock pulse

width

PWH/tCYLL

PWL/tCYLL

When using

external clock

(3) Internal CR Oscillation Characteristics

・ High-speed Internal CR

(VCC = 2.7V to 5.5V, VSS = 0V, TA = - 40°C to + 85°C)

Parameter

Symbol

Conditions

Value

Unit

Remarks

Min

Typ

Max

Clock frequency

fCRH

TA = + 25°C

3.96

4.04

MHz

When trimming*

TA =

0°C to + 70°C

3.84

4.16

TA =

- 40°C to + 85°C

3.8

4.2

TA =

- 40°C to + 85°C

When not trimming

Frequency

stability time

tCRWT

μs

*1: In the case of using the values in CR trimming area of Flash memory at shipment for frequency trimming.

*2: Frequency stable time is time to stable of the frequency of the High-speed CR.

clock after the trim value is set. After setting the trim value, the period when the frequency stability

time passes can use the High-speed CR clock as a source clock.

・ Low-speed Internal CR

(VCC = 2.7V to 5.5V, VSS = 0V, TA = - 40°C to + 85°C)

Parameter

Symbol

Conditions

Value

Unit

Remarks

Min

Typ

Max

Clock frequency

fCRL

100

150

kHz

X0A

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