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KM416RD8AS-RBM80 Datasheet(PDF) 46 Page - Samsung semiconductor |
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KM416RD8AS-RBM80 Datasheet(HTML) 46 Page - Samsung semiconductor |
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46 / 64 page ![]() Page 43 KM416RD8AS Direct RDRAM™ Rev. 0.9 July 1999 Target Current and Temperature Control Figure 51 shows an example of a transaction which performs current control calibration. It is necessary to perform this operation once to every RDRAM in every tCCTRL interval in order to keep the IOL output current in its proper range. This example uses four COLX packets with a CAL command. These cause the RDRAM to drive four calibra- tion packets Q(a0) a time tCAC later. An offset of tRDTOCC must be placed between the Q(a0) packet and read data Q(a1)from the same device. These calibration packets are driven on the DQA4..3 and DQB4..3 wires. The TSQ bit of the INIT register is driven on the DQA5 wire during same interval as the calibration packets. The remaining DQA and DQB wires are not used during these calibration packets. The last COLX packet also contains a SAM command (concatenated with the CAL command). The RDRAM samples the last calibration packet and adjusts its IOL current value. Unlike REF commands, CAL and SAM commands cannot be broadcast. This is because the calibration packets from different devices would interfere. Therefore, a current control transaction must be sent every tCCTRL/N, where N is the number of RDRAMs on the Channel. The device field Da of the address a0 in the CAL/SAM command should be incremented after each transaction. Figure 52 shows an example of a temperature calibration sequence to the RDRAM. This sequence is broadcast once every tTEMP interval to all the RDRAMs on the Channel. The TCEN and TCAL are ROP commands, and cause the slew rate of the output drivers to adjust for temperature drift. During the quiet interval tTCQUIET the devices being cali- brated can’t be read, but they can be written. Figure 51: Current Control CAL/SAM Transaction Example Figure 52: Temperature Calibration (TCEN-TCAL) Transactions to RDRAM CTM/CFM DQA7..0 DQB7..0 COL4 ..COL0 ROW2 ..ROW0 T0 T4 T8 T12 T1 T5 T9 T13 T2 T6 T10 T14 T3 T7 T11 T15 T16 T20 T24 T28 T17 T21 T25 T29 T18 T22 T26 T30 T19 T23 T27 T31 T32 T36 T40 T44 T33 T37 T41 T45 T34 T38 T42 T46 T35 T39 T43 T47 Transaction a0: CAL/SAM a0 = {Da, Bx} Transaction a1: RD a1 = {Da, Bx} CAL a0 CAL a2 Q (a0) tCAC CAL a0 CAL a0 CAL/SAM a0 CAL b0 DQA5 of the first calibrate packet has the inverted TSQ bit of INIT control register; i.e. logic 0 or high voltage means hot temperature. Q (a1) tREADTOCC a2 = {Da+1, Bx} Transaction a2: CAL/SAM Read data from the same device from an earlier RD command must be at this packet position or earlier. Read data from a different device from an earlier RD command can be anywhere prior to the Q(a0) packet. . Q (a1) tCCSAMTOREAD Read data from a different device from a later RD command can be anywhere after to the Q(a0) packet. Read data from the same device from a later RD command must be at this packet position or later. tCCTRL When used for monitoring, it should be enabled with the DQA3 bit (current control one value) in case there is no RDRAM present: HotTemp = DQA5•DQA3 CTM/CFM DQA7..0 DQB7..0 COL4 ..COL0 ROW2 ..ROW0 T0 T4 T8 T12 T1 T5 T9 T13 T2 T6 T10 T14 T3 T7 T11 T15 T16 T20 T24 T28 T17 T21 T25 T29 T18 T22 T26 T30 T19 T23 T27 T31 T32 T36 T40 T44 T33 T37 T41 T45 T34 T38 T42 T46 T35 T39 T43 T47 tTCEN TCEN TCAL TCEN tTCAL No read data from devices tTCQUIET being calibrated tTEMP Any ROW packet may be placed in the gap between the ROW packets with the TCEN and TCAL commands. |
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