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KM416RD8AS-RBM80 Datasheet(PDF) 46 Page - Samsung semiconductor

Part # KM416RD8AS-RBM80
Description  128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
PDF  64 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416RD8AS-RBM80 Datasheet(HTML) 46 Page - Samsung semiconductor

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Page 43
KM416RD8AS
Direct RDRAM™
Rev. 0.9 July 1999
Target
Current and Temperature Control
Figure 51 shows an example of a transaction which performs
current control calibration. It is necessary to perform this
operation once to every RDRAM in every tCCTRL interval in
order to keep the IOL output current in its proper range.
This example uses four COLX packets with a CAL
command. These cause the RDRAM to drive four calibra-
tion packets Q(a0) a time tCAC later. An offset of tRDTOCC
must be placed between the Q(a0) packet and read data
Q(a1)from the same device. These calibration packets are
driven on the DQA4..3 and DQB4..3 wires. The TSQ bit of
the INIT register is driven on the DQA5 wire during same
interval as the calibration packets. The remaining DQA and
DQB wires are not used during these calibration packets.
The last COLX packet also contains a SAM command
(concatenated with the CAL command). The RDRAM
samples the last calibration packet and adjusts its IOL current
value.
Unlike REF commands, CAL and SAM commands cannot
be broadcast. This is because the calibration packets from
different devices would interfere. Therefore, a current
control transaction must be sent every tCCTRL/N, where N is
the number of RDRAMs on the Channel. The device field
Da of the address a0 in the CAL/SAM command should be
incremented after each transaction.
Figure 52 shows an example of a temperature calibration
sequence to the RDRAM. This sequence is broadcast once
every tTEMP interval to all the RDRAMs on the Channel.
The TCEN and TCAL are ROP commands, and cause the
slew rate of the output drivers to adjust for temperature drift.
During the quiet interval tTCQUIET the devices being cali-
brated can’t be read, but they can be written.
Figure 51: Current Control CAL/SAM Transaction Example
Figure 52: Temperature Calibration (TCEN-TCAL) Transactions to RDRAM
CTM/CFM
DQA7..0
DQB7..0
COL4
..COL0
ROW2
..ROW0
T0
T4
T8
T12
T1
T5
T9
T13
T2
T6
T10
T14
T3
T7
T11
T15 T16
T20
T24
T28
T17
T21
T25
T29
T18
T22
T26
T30
T19
T23
T27
T31 T32
T36
T40
T44
T33
T37
T41
T45
T34
T38
T42
T46
T35
T39
T43
T47
Transaction a0: CAL/SAM
a0 = {Da, Bx}
Transaction a1: RD
a1 = {Da, Bx}
CAL a0
CAL a2
Q (a0)
tCAC
CAL a0
CAL a0
CAL/SAM a0
CAL b0
DQA5 of the first calibrate packet has the inverted TSQ bit of INIT
control register; i.e. logic 0 or high voltage means hot temperature.
Q (a1)
tREADTOCC
a2 = {Da+1, Bx}
Transaction a2: CAL/SAM
Read data from the same
device from an earlier RD
command must be at this
packet position or earlier.
Read data from a different
device from an earlier RD
command can be anywhere
prior to the Q(a0) packet. .
Q (a1)
tCCSAMTOREAD
Read data from a different
device from a later RD
command can be anywhere
after to the Q(a0) packet.
Read data from the same device
from a later RD command must
be at this packet position or
later.
tCCTRL
When used for monitoring, it should be enabled with the DQA3
bit (current control one value) in case there is no RDRAM present:
HotTemp = DQA5•DQA3
CTM/CFM
DQA7..0
DQB7..0
COL4
..COL0
ROW2
..ROW0
T0
T4
T8
T12
T1
T5
T9
T13
T2
T6
T10
T14
T3
T7
T11
T15 T16
T20
T24
T28
T17
T21
T25
T29
T18
T22
T26
T30
T19
T23
T27
T31 T32
T36
T40
T44
T33
T37
T41
T45
T34
T38
T42
T46
T35
T39
T43
T47
tTCEN
TCEN
TCAL
TCEN
tTCAL
No read data from devices
tTCQUIET
being calibrated
tTEMP
Any ROW packet may be placed
in the gap between the ROW
packets with the TCEN and
TCAL commands.



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