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KM416RD8AS-RBM80 Datasheet(PDF) 48 Page - Samsung semiconductor |
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KM416RD8AS-RBM80 Datasheet(HTML) 48 Page - Samsung semiconductor |
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48 / 64 page ![]() Page 45 KM416RD8AS Direct RDRAM™ Rev. 0.9 July 1999 Target tCYCLE1 SCK cycle time - Serial control register transactions 1000 - ns Figure 56 SCK cycle time - Power transitions 10 - ns Figure 56 tCH1, tCL1 SCK high and low times 4.25 - ns Figure 56 tS1 CMD setup time to SCK rising or falling edgea 1 - ns Figure 56 tH1 CMD hold time to SCK rising or falling edgec 1 - ns Figure 56 tS2 SIO0 setup time to SCK falling edge 40 - ns Figure 56 tH2 SIO0 hold time to SCK falling edge 35 - ns Figure 56 tS3 PDEV setup time on DQA5..0 to SCK rising edge. 0 - ns Figure 48, Figure 57 tH3 PDEV hold time on DQA5..0 to SCK rising edge. 5.5 - ns tS4 ROW2..0, COL4..0 setup time for quiet windowb -1 - tCYCLE Figure 48 tH4 ROW2..0, COL4..0 hold time for quiet window 5 - tCYCLE Figure 48 vIL,CMOS CMOS input low voltage - over/undershoot voltage duration is less than or equal to 5ns - 0.7 VCMOS/2 - 0.6 V vIH,CMOS CMOS input high voltage - over/undershoot voltage duration is less than or equal to 5ns VCMOS/2 + 0.6 VCMOS + 0.7 V tNPQ Quiet on ROW/COL bits during NAP/PDN entry 4 - tCYCLE Figure 47 tREADTOCC Offset between read data and CC packets (same device) 12 - tCYCLE Figure 51 tCCSAMTOREAD Offset between CC packet and read data (same device) 8 - tCYCLE Figure 51 tCE CTM/CFM stable before NAP/PDN exit 2 - tCYCLE Figure 48 tCD CTM/CFM stable after NAP/PDN entry 100 - tCYCLE Figure 47 tFRM ROW packet to COL packet ATTN framing delay 7 - tCYCLE Figure 46 tNLIMIT Maximum time in NAP mode 10.0 µs Figure 45 tREF Refresh interval 32 ms Figure 50 tCCTRL Current control interval 34 tCYCLE 100ms ms/tCYCLE Figure 51 tTEMP Temperature control interval 100 ms Figure 52 tTCEN TCE command to TCAL command 150 - tCYCLE Figure 52 tTCAL TCAL command to quiet window 2 2 tCYCLE Figure 52 tTCQUIET Quiet window (no read data) 140 - tCYCLE Figure 52 tPAUSE RDRAM delay (no RSL operations allowed) 200.0 µs page 28 a. With VIL,CMOS=0.5VCMOS-0.6V and VIH,CMOS=0.5VCMOS+0.6V b. Effective setup becomes tS4 ’ =tS4+[PDNXA•64•t SCYCLE+tPDNXB,MAX]-[PDNX•256•t SCYCLE] if [PDNX•256•t SCYCLE] < [PDNXA•64•t SCYCLE+tPDNXB,MAX]. See Figure 48. Table 19: Timing Conditions Symbol Parameter Min Max Unit Figure(s) |
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