KM416RD8AS-RBM80 datasheet(37/64 Pages) SAMSUNG

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Page 34

KM416RD8AS

Direct RDRAM™

Rev. 0.9 July 1999

Target

Figure 32: REFB Register

Figure 33: CCA Register

15 14 13 12 11 10

REFB3..REFB0

Read/write register.

Reset value is zero (from SETR/CLRR).

Refresh Bank register.

REFB3..REFB0 is the bank that will be refreshed next

during self-refresh. REFB3..0 is incremented after each

self-refresh activate and precharge operation pair.

Control Register: REFB

Address: 04116

15 14 13 12 11 10

CCA6..CCA0

ASYMA

Read/write register.

Reset value is zero (SETR/CLRR or SIO Reset).

CCA6..CCA0 - Current Control A. Controls the IOL

output current for the DQA7..DQA0 pins.

ASYMA0 control the asymmetry of the VOL/VOH

voltage swing about the VREF reference voltage for the

DQA7..0 pins.

Control Register: CCA

Address: 04316

Figure 34: REFR Register

Figure 35: CCB Register

15 14 13 12 11 10

REFR8..REFR0

Read/write register.

Reset value is zero (from SETR/CLRR).

Refresh Row register.

REFR8..REFR0 is the row that will be refreshed next

by the REFP command or by self-refresh. REFR8..0 is

incremented when BR3..0=1111 for the REFA

command. REFR8..0 is incremented when

REFB3..0=1111 for self-refresh.

Control Register: REFR

Address: 04216

15 14 13 12 11 10

CCB6..CCB0

ASYMB

Read/write register.

Reset value is zero (SETR/CLRR or SIO Reset).

CCB6..CCB0 - Current Control B. Controls the IOL

output current for the DQB7..DQB0 pins.

ASYMB0 control the asymmetry of the VOL/VOH

voltage swing about the VREF reference voltage for the

DQB7..0 pins.

Control Register: CCB

Address: 04416

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