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KM416RD8AS-RBM80 Datasheet(PDF) 49 Page - Samsung semiconductor |
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KM416RD8AS-RBM80 Datasheet(HTML) 49 Page - Samsung semiconductor |
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49 / 64 page ![]() Page 46 KM416RD8AS Direct RDRAM™ Rev. 0.9July 1999 Target Electrical Characteristics Timing Characteristics Table 20: Electrical Characteristics Symbol Parameter and Conditions Min Max Unit Θ JC Junction-to-Case thermal resistance TBD °C/Watt IREF VREF current @ VREF,MAX -10 10 µA IOH RSL output high current @ (0 ≤V OUT≤VDD) -10 10 µA IALL RSL IOL current @ VOL = 0.9V, VDD,MIN , TJ,MAX a 22 50 mA ∆I OL RSL IOL current resolution step - 2.0 mA rOUT Dynamic output impedance 100 - Ω II,CMOS CMOS input leakage current @ (0 ≤V I,CMOS≤VCMOS) -10.0 10.0 µA VOL,CMOS CMOS output voltage @ IOL,CMOS= 1.0mA - 0.3 V VOH,CMOS CMOS output high voltage @ IOH,CMOS= -0.25mA VCMOS-0.3 - V a. This measurement is made in manual current control mode; i.e. with all output device legs sinking current. Table 21: Timing Characteristics Symbol Parameter Min Max Unit Figure(s) tQ CTM-to-DQA/DQB output time @ tCYCLE=2.5ns -0.310 +0.310 ns Figure 55 tQR, tQF DQA/DQB output rise and fall times 0.2 0.45 ns Figure 55 tQ1 SCK-to-SIO0 delay @ CLOAD,MAX = 20pF (SD read packet). - 10 ns Figure 58 tQR1, tQF1 SIOOUT rise/fall @ CLOAD,MAX = 20pF - 5 ns Figure 58 tPROP1 SIO0-to-SIO1 or SIO1-to-SIO0 delay @ CLOAD,MAX = 20pF - 10 ns Figure 58 tNAPXA NAP exit delay - phase A - 50 ns Figure 48 tNAPXB NAP exit delay - phase B - 40 ns Figure 48 tPDNXA PDN exit delay - phase A - 4 µs Figure 48 tPDNXB PDN exit delay - phase B - 9000 tCYCLE Figure 48 tAS ATTN-to-STBY power state delay - 1 tCYCLE Figure 46 tSA STBY-to-ATTN power state delay - 0 tCYCLE Figure 46 tASN ATTN/STBY-to-NAP power state delay - 8 tCYCLE Figure 47 tASP ATTN/STBY-to-PDN power state delay - 8 tCYCLE Figure 47 |
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