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STA310 Datasheet(PDF) 5 Page - STMicroelectronics |
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STA310 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 90 page ![]() 5/90 STA310 ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (VDD = 3.3V +/-0.3V; Tamb = 0 to 70°C; Rg = 50 Ω unless otherwise spec- ified GENERAL INTERFACE Note: 1. The leakage currents are generally very small, <1nA. The value given here, 1 µA, is a maximum that can occur after an Electrostatic Stress on the pin. 2. V> Vdd3 for 3.3V buffers. 3. Human Body Model LVTTL & LVCMOS DC Input Specification 2.7V <Vdd3 <3.6V Note: 1. Takes into account 200mV voltage drop in both supply lines. 2. X in the source/sink current under worst case conditions and is reflected in the name of the I/O cell according to the drive capability Symbol Parameters Value Unit Vdd 2.5V Power Supply Voltage -0.5 to 3.3 V 2.5V Input or Output Voltage -0.5 to (Vdd+0.5) V Vdd3 3.3V Power Supply Voltage -0.5 to 4 V 3.3V Input or Output Voltage -0.5 to (Vdd+0.5) V DC OPERATING CONDITIONS Symbol Parameters Value Unit Vcc Power Supply Voltage 2.5 V Tj Operating Junction Temperature -20 to 125 °C Symbol Parameters Conditions Min Typ Max Unit Note Iil Low level input current without pull-up device Vi = 0V 1 µA 1 Iih High level input current without pull-down device Vi = Vdd 1 µA1 Ioz Tri-state output leakage without pull-up/down device Vi = 0V or Vdd 1 µA1 Ilatchup I/O Latch-up current V<0V, V>Vdd 200 mA 2 Vesd Electrostatic protection Leakage <1 µA 2000 V 3 Symbol Parameters Conditions Min Typ Max Unit Note Vil Low level input voltage 0.8 V 1 Vih High level input voltage 2.0 V 1 Vilhyst Low level threshold input falling 0.8 1.35 V 1 Vihhyst High level threshold input rising 1.3 2.0 V 1 Vhyst Schmitt trigger hysteresis 0.3 0.8 V 1 |
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