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SPSB0813 Datasheet(PDF) 10 Page - STMicroelectronics |
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SPSB0813 Datasheet(HTML) 10 Page - STMicroelectronics |
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10 / 135 page ![]() Table 4. Transient immunity ratings according to ISO 7637-2 - PARAMETER VALUE UNIT ISO 7637-2 and IEC 62215-3 transients immunity according to “OEM_HW_Requirements_For_CAN_LIN_ FR-Interfaces_V1.3_2012” and IBEE EMC test specifications (1) (LIN and CAN) Pulse1 -100 V Pulse2a +75 V Pulse3a -150 V Pulse3b +100 V 1. ISO 7637 is a system level transient test. Different system level configurations may lead to different results. 2.3 Temperature ranges and thermal data Table 5. Temperature ranges and thermal data Symbol Parameter Condition Min Typ Max Unit Item Tamb Operating temperature (ECU environment) - -40 - 125 °C F.019 Tj Operating junction temperature - -40 - 175 °C F.020 Tstg Storage temperature - -55 - 150 °C F.021 TW ON Thermal over temperature warning threshold - 140 - 160 °C F.022 TSD1 OFF (1) Thermal shut-down junction temperature 1 - 165 - 185 °C F.023 TSD2 OFF (1) Thermal shut-down temperature - 175 - 195 °C F.024 TSD12hys (1) Thermal shut-down temperature hysteresis - - 5 - °C F.025 tfTjTW Thermal warning / shut down filter time Tested by scan 24 32 43 µs F.026 RTh jamb (2) Thermal resistance junction-to-ambient - - 38 - °C/W F.027 1. Non-overlapping 2. The values quoted are for PCB 129 mm x 60 mm x 1.6 mm, FR4, four layers; Cu thickness 0.070 mm (outer layers). Cu thickness 0.035 mm (inner layers), thermal vias separation 1.2 mm, thermal via diameter 0.3 mm +/- 0.08 mm, Cu thickness on vias 0.025 mm, footprint dimension 3.5 mm x 3.5 mm All parameters are guaranteed in the temperature range from -40 to 50°C (unless otherwise specified); the device is still operative and functional at higher temperatures (up to 175°C). Parameters limits at higher temperatures than 150°C may change with respect to what is specified as per the standard temperature range. Device functionality at high temperature is guaranteed by characterization. SPSB081 embeds a multitude of junctions housed in a relatively small piece of silicon. The devices contain, among all the described features, four high-sides, two voltage regulators (one of which can work as voltage tracker). For this reason, using the thermal impedance of a single junction (that is, voltage regulator or major power dissipation contributor) does not allow to predict thermal behavior of the whole device and therefore it is not possible to assess if a device is thermally suitable for a given activation profile and loads characteristics. Some representative and realistic worst-case thermal profiles are described in the below paragraph. The following measurement methods can be easily implemented, by final user, for a specific activation profile. Activation profile battery voltage: 16 V, ambient temperature starts at 85°C. DC activation: • V1 (3.3V) charged with 70 mA; Rdson = 470 Ω (DC activation) • V2 (3.3V) charged with 50 mA; Rdson = 680 Ω (DC activation) SPSB081 Temperature ranges and thermal data DS14048 - Rev 1 page 10/135 |
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