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TJA1080ATS/2/T Datasheet(PDF) 27 Page - NXP Semiconductors |
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TJA1080ATS/2/T Datasheet(HTML) 27 Page - NXP Semiconductors |
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27 / 49 page ![]() TJA1080A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 24 February 2011 27 of 49 NXP Semiconductors TJA1080A FlexRay transceiver 7. Limiting values [1] According to ISO7637, test pulse 1, class C; verified by an external test house. [2] According to ISO7637, test pulse 2a, class C; verified by an external test house. Table 11. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are referenced to GND. Symbol Parameter Conditions Min Max Unit VBAT battery supply voltage no time limit −0.3 +60 V operating range 6.5 60 V VCC supply voltage no time limit −0.3 +5.5 V operating range 4.75 5.25 V VBUF supply voltage on pin VBUF no time limit −0.3 +5.5 V operating range 4.75 5.25 V VIO supply voltage on pin VIO no time limit −0.3 +5.5 V operating range 2.2 5.25 V VINH1 voltage on pin INH1 −0.3 VBAT + 0.3 V IO(INH1) output current on pin INH1 no time limit −1- mA VINH2 voltage on pin INH2 −0.3 VBAT + 0.3 V IO(INH2) output current on pin INH2 no time limit −1- mA VWAKE voltage on pin WAKE −0.3 VBAT + 0.3 V Io(WAKE) output current on pin WAKE pin GND not connected −15 - mA VBGE voltage on pin BGE no time limit −0.3 +5.5 V VTXEN voltage on pin TXEN no time limit −0.3 +5.5 V VTXD voltage on pin TXD no time limit −0.3 +5.5 V VERRN voltage on pin ERRN no time limit −0.3 VIO + 0.3 V VRXD voltage on pin RXD no time limit −0.3 VIO + 0.3 V VRXEN voltage on pin RXEN no time limit −0.3 VIO + 0.3 V VEN voltage on pin EN no time limit −0.3 +5.5 V VSTBN voltage on pin STBN no time limit −0.3 +5.5 V VTRXD0 voltage on pin TRXD0 no time limit −0.3 +5.5 V VTRXD1 voltage on pin TRXD1 no time limit −0.3 +5.5 V VBP voltage on pin BP no time limit −60 +60 V VBM voltage on pin BM no time limit −60 +60 V Vtrt transient voltage on pins BM and BP [1] −100 - V [2] -75 V [3] −150 - V [4] -100 V Tstg storage temperature −55 +150 °C Tvj virtual junction temperature [5] −40 +150 °C VESD electrostatic discharge voltage HBM on pins BP and BM to ground [6] −8.0 +8.0 kV HBM at any other pin [6] −4.0 +4.0 kV MM on all pins [7] −200 +200 V CDM on all pins [8] −1000 +1000 V |
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