TJA1080ATSSLASH2SLASHT datasheet(32/49 Pages) NXP

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TJA1080A

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Product data sheet

Rev. 5 — 24 February 2011

32 of 49

NXP Semiconductors

TJA1080A

FlexRay transceiver

Io(idle)BP

idle output current on

pin BP

−60 V ≤ V

BP ≤ +60 V; with

respect to GND and VBAT

−7.5

+7.5

Io(idle)BM

idle output current on

pin BM

−60 V ≤ V

BM ≤ +60 V; with

respect to GND and VBAT

−7.5

+7.5

Vo(idle)(dif)

differential idle output

voltage

−25

+25

VOH(dif)

differential HIGH-level

output voltage

Ω ≤ R

bus ≤ 55 Ω;

VCC =VBUF = 5 V;

Cbus =100 pF

600

850

1500

VOL(dif)

differential LOW-level

output voltage

Ω ≤ R

bus ≤ 55 Ω;

VCC =VBUF = 5 V;

Cbus =100 pF

−1500

−850

−600

VIH(dif)

differential HIGH-level

input voltage

normal power modes;

−10 V ≤ V

BP ≤ +15 V;

−10 V ≤ V

BM ≤ +15 V

150

210

300

VIL(dif)

differential LOW-level

input voltage

normal power modes;

−10 V ≤ V

BP ≤ +15 V;

−10 V ≤ V

BM ≤ +15 V

−300

−210

−150

low power modes;

−10 V ≤ V

BP ≤ +15 V;

−10 V ≤ V

BM ≤ +15 V

−400

−210

−125

|ΔV

i(dif)(H-L)|

differential input volt.

diff. betw. HIGH- and

LOW-levels (abs. value)

normal power modes

(VBP +VBM)/2=2.5V

--10

i(dif)det(act)|

activity detection

differential input voltage

(absolute value)

normal power modes

150

210

300

O(sc)|

short-circuit output

current (absolute value)

on pin BP; 0 V

≤ V

BP ≤ 60 V

--35

on pin BM; 0 V

≤ V

BM ≤ 60 V

--35

on pins BP and BM; VBP =VBM;

≤ V

BP ≤ 60 V;

≤ V

BM ≤ 60 V

--35

Ri(BP)

input resistance on pin

idle level; Rbus = ∞ Ω

18.5

Ri(BM)

input resistance on pin

idle level; Rbus = ∞ Ω

18.5

Ri(dif)(BP-BM)

differential input

resistance between pin

BP and pin BM

idle level; Rbus = ∞ Ω

ILI(BP)

input leakage current on

pin BP

VBP =5 V;

VBAT =VCC =VIO =0 V

−10

+10

μA

ILI(BM)

input leakage current on

pin BM

VBM =5V;

VBAT =VCC =VIO =0 V

−10

+10

μA

Vcm(bus)(DATA_0)

DATA_0 bus

common-mode voltage

Rbus = 45 Ω

0.4VBUF

0.5VBUF

0.6VBUF

Table 13.

Static characteristics …continued

All parameters are guaranteed for VBAT = 6.5 V to 60 V; VCC = 4.75 V to 5.25 V; VBUF = 4.75 V to 5.25 V; VIO = 2.2 V to 5.25 V;

Tvj = −40 °C to +150 °C; Rbus = 45 Ω; RTRXD = 200 Ω unless otherwise specified. All voltages are defined with respect to

ground; positive currents flow into the IC.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TJA1080ATS/2/T Datasheet(PDF) 32 Page - NXP Semiconductors

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