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TJA1080ATS/2/T Datasheet(PDF) 36 Page - NXP Semiconductors

Part # TJA1080ATS/2/T
Description  FlexRay transceiver Support of 60 ns minimum bit time
PDF  49 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

TJA1080ATS/2/T Datasheet(HTML) 36 Page - NXP Semiconductors

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TJA1080A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 24 February 2011
36 of 49
NXP Semiconductors
TJA1080A
FlexRay transceiver
[1]
Rise and fall time (10 % to 90 %) of tr(TXD) and tf(TXD) = 5 ns ± 1ns.
[2]
Rise and fall time (10 % to 90 %) of tr(TRXD) and tf(TRXD) = 5 ns ± 1ns.
[3]
The worst case asymmetry from one branch to another is the sum of the delay difference from TRXD0 and TRXD1 to DATA_0 and
DATA_1 plus the delay difference from DATA_0 and DATA_1 to TRXD0 and TRXD1.
Star modes
tto(idle-sleep)
idle to sleep time-out time
640
-
2660
ms
tto(tx-locked)
transmit to locked time-out time
2600
-
10400
μs
tto(rx-locked)
receive to locked time-out time
2600
-
10400
μs
tto(locked-sleep)
locked to sleep time-out time
64
-
333
ms
tto(locked-idle)
locked to idle time-out time
1.4
-
5.1
μs
Node modes
td(STBN-RXD)
STBN to RXD delay time
STBN HIGH to RXD HIGH; wake
flag set
--2
μs
td(STBN-INH2)
STBN to INH2 delay time
STBN LOW to INH2 floating;
Normal mode
--12
μs
th(gotosleep)
go-to-sleep hold time
20
35
50
μs
Status register
tdet(EN)
detection time on pin EN
for mode control
20
-
80
μs
TEN
time period on pin EN
for reading status bits
4
-
20
μs
td(EN-ERRN)
delay time from EN to ERRN
for reading status bits
-
-
2
μs
WAKE
twake(WAKE)
wake-up time on pin WAKE
low power mode; falling edge on
pin WAKE; 6.5 V
≤ V
BAT ≤ 27 V
5
28
100
μs
low power mode; falling edge on
pin WAKE; 27 V < VBAT ≤ 60 V
25
75
175
μs
Miscellaneous
tdetCL(TXEN_BGE) TXEN_BGE clamp detection
time
2600
-
10400
μs
tdet(col)(TRXD)
TRXD collision detection time
TRXD0 and TRXD1
20
-
-
ns
Table 14.
Dynamic characteristics …continued
All parameters are guaranteed for VBAT = 6.5 V to 60 V; VCC = 4.75 V to 5.25 V; VBUF = 4.75 V to 5.25 V; VIO = 2.2 V to 5.25 V;
Tvj = 40 °C to +150 °C; Rbus = 45 Ω; RTRXD = 200 Ω unless otherwise specified. All voltages are defined with respect to
ground; positive currents flow into the IC.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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