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AT697F Datasheet(PDF) 46 Page - ATMEL Corporation

Part # AT697F
Description  SPARC V8 High Performance Low-power 32-bit Architecture
PDF  176 Pages
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Manufacturer  ATMEL [ATMEL Corporation]
Direct Link  http://www.atmel.com
Logo ATMEL - ATMEL Corporation

AT697F Datasheet(HTML) 46 Page - ATMEL Corporation

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AT697F
7703E–AERO–08/11
Bus Exception
A PROM, SRAM or I/O read/write access error can be signalled to the processor by
asserting the BEXC* signal which is sampled together with the read/written data, if
enabled in the memory controller (MCFG1.bexc = 1):
•an instruction_access_exception trap (0x01) is generated if an instruction
fetch is in progress
•a data_access_exception trap (0x09) is generated if a data load is in progress
•a write_error trap (0x2B) is generated if a data store is in progress
EDAC Management
Overview
The AT697F implements on-chip error detection and correction (EDAC). It can correct
any single-bit error and detect double-bit errors in a 32-bit word.
EDAC Capability Mapping
EDAC is available on PROM, SRAM and SDRAM memory areas.
Table 13. External Memory EDAC Capability
0x00000000 - 0x1FFFFFFF
PROM
8 bits
yes
32 bits
yes
0x20000000 - 0x3FFFFFFF
I/O
All
no
0x40000000 - 0x7FFFFFFF
SRAM
8 bits
yes
32 bits
yes
SDRAM
32 bits
yes
PROM Protection
When EDAC is activated on the PROM area(1) (MCFG3.pe = 1), error detection and cor-
rection is performed on every instruction fetch and data load in that area.
Note:
1. Upon reset, EDAC on the PROM area is automatically configured from the value read
on the PIO[2] pin. By driving PIO[2] high during reset, it is possible to enable
EDAC on PROM on boot.
RAM Protection
When EDAC is activated on the RAM area(1)(2) (MCFG3.re = 1), error detection and cor-
rection is performed on every instruction fetch and data load in that area.
Notes: 1. When EDAC is enabled on the RAM area, read-modify-write on the SRAM
(MCFG2.ramrmw) shall be enabled as well so the integrity of the EDAC checkbits is
preserved on sub-word writes.
2. Activating EDAC on the RAM area automatically enables read-modify-write on sub-
word writes to the SDRAM.
Caution: The RAM area shall always be initialized with 32-bit word writes prior to EDAC activation
so further sub-word writes (performed as 32-bit read-modify-write atomic operations)
always successfully pass the initial read & check step (see "Read Access").
Operation
When enabled, the EDAC operates on every access to the external memory.
Hamming Code
For each word, a 7-bit checksum is generated according to the following equations:
CB0 = D0 ^ D4 ^ D6 ^ D7 ^ D8 ^ D9 ^ D11 ^ D14 ^ D17 ^ D18 ^ D19 ^ D21 ^ D26 ^ D28 ^ D29 ^ D31
CB1 = D0 ^ D1 ^ D2 ^ D4 ^ D6 ^ D8 ^ D10 ^ D12 ^ D16 ^ D17 ^ D18 ^ D20 ^ D22 ^ D24 ^ D26 ^ D28
CB2 = D0 ^ D3 ^ D4 ^ D7 ^ D9 ^ D10 ^ D13 ^ D15 ^ D16 ^ D19 ^ D20 ^ D23 ^ D25 ^ D26 ^ D29 ^ D31
CB3 = D0 ^ D1 ^ D5 ^ D6 ^ D7 ^ D11 ^ D12 ^ D13 ^ D16 ^ D17 ^ D21 ^ D22 ^ D23 ^ D27 ^ D28 ^ D29
CB4 = D2 ^ D3 ^ D4 ^ D5 ^ D6 ^ D7 ^ D14 ^ D15 ^ D18 ^ D19 ^ D20 ^ D21 ^ D22 ^ D23 ^ D30 ^ D31
CB5 = D8 ^ D9 ^ D10 ^ D11 ^ D12 ^ D13 ^ D14 ^ D15 ^ D24 ^ D25 ^ D26 ^ D27 ^ D28 ^ D29 ^ D30 ^ D31
Address Range
Area
EDAC Protected



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