V62SLASH13624-01XE-R datasheet(43/77 Pages) TI1

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MSP430F2132-EP

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SLAS913A – JULY 2013 – REVISED AUGUST 2013

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(1)

Additional flash retention documentation located in application report SLAA392.

(2)

Not ensured for TA > 105°C.

(3)

The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming

methods: individual word/byte write and block write modes.

(4)

These values are hardwired into the flash controller's state machine (tFTG = 1/fFTG).

5.36

Flash Memory

(1)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

VCC

MIN

TYP

MAX

UNIT

VCC (PGM/ERASE)

Program and erase supply voltage

2.2

3.6

fFTG

Flash timing generator frequency

257

476

kHz

IPGM

Supply current from VCC during

program(2)

2.2 V/3.6 V

IERASE

Supply current from VCC during erase

(2)

2.2 V/3.6 V

tCPT

Cumulative program time(2)(3)

2.2 V/3.6 V

tCMErase

Cumulative mass erase time(2)

2.2 V/3.6 V

Program and erase endurance(2)

104

105

cycles

tRetention

Data retention duration

TJ = 25°C

100

years

tWord

Word or byte program time

See (4)

tFTG

tBlock, 0

Block program time for first byte or word

See (4)

tFTG

tBlock, 1-63

Block program time for each additional

byte or word

See (4)

tFTG

tBlock, End

Block program end-sequence wait time

See (4)

tFTG

tMass Erase

Mass erase time

See (4)

10593

tFTG

tSeg Erase

Segment erase time

See (4)

4819

tFTG

(1)

This parameter defines the minimum supply voltage VCC when the data in RAM remains unchanged. No program execution should

happen during this supply voltage condition.

5.37 RAM

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

MAX

UNIT

V(RAMh)

RAM retention supply voltage(1)

CPU halted

1.6

V62/13624-01XE-R Datasheet(PDF) 43 Page - Texas Instruments

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