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TJA1080ATS/2/T Datasheet(PDF) 27 Page - NXP Semiconductors

Part # TJA1080ATS/2/T
Description  FlexRay transceiver
PDF  49 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

TJA1080ATS/2/T Datasheet(HTML) 27 Page - NXP Semiconductors

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TJA1080A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 28 November 2012
27 of 49
NXP Semiconductors
TJA1080A
FlexRay transceiver
7.
Limiting values
[1]
According to ISO7637, test pulse 1, class C; verified by an external test house.
[2]
According to ISO7637, test pulse 2a, class C; verified by an external test house.
[3]
According to ISO7637, test pulse 3a, class C; verified by an external test house.
[4]
According to ISO7637, test pulse 3b, class C; verified by an external test house.
[5]
In accordance with IEC 60747-1. An alternative definition of virtual junction temperature Tvj is: Tvj = Tamb + P  Rth(j-a), where Rth(j-a) is a
fixed value to be used for the calculation of Tvj. The rating for Tvj limits the allowable combinations of power dissipation (P) and ambient
temperature (Tamb).
Table 11.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are referenced to GND.
Symbol
Parameter
Conditions
Min
Max
Unit
VBAT
battery supply voltage
no time limit
0.3
+60
V
VCC
supply voltage
no time limit
0.3
+5.5
V
VBUF
supply voltage on pin VBUF
no time limit
0.3
+5.5
V
VIO
supply voltage on pin VIO
no time limit
0.3
+5.5
V
VINH1
voltage on pin INH1
0.3
VBAT + 0.3
V
IO(INH1)
output current on pin INH1
no time limit
1-
mA
VINH2
voltage on pin INH2
0.3
VBAT + 0.3
V
IO(INH2)
output current on pin INH2
no time limit
1-
mA
VWAKE
voltage on pin WAKE
0.3
VBAT + 0.3
V
Io(WAKE)
output current on pin WAKE
pin GND not connected
15
-
mA
VBGE
voltage on pin BGE
no time limit
0.3
+5.5
V
VTXEN
voltage on pin TXEN
no time limit
0.3
+5.5
V
VTXD
voltage on pin TXD
no time limit
0.3
+5.5
V
VERRN
voltage on pin ERRN
no time limit
0.3
VIO + 0.3
V
VRXD
voltage on pin RXD
no time limit
0.3
VIO + 0.3
V
VRXEN
voltage on pin RXEN
no time limit
0.3
VIO + 0.3
V
VEN
voltage on pin EN
no time limit
0.3
+5.5
V
VSTBN
voltage on pin STBN
no time limit
0.3
+5.5
V
VTRXD0
voltage on pin TRXD0
no time limit
0.3
+5.5
V
VTRXD1
voltage on pin TRXD1
no time limit
0.3
+5.5
V
VBP
voltage on pin BP
no time limit
60
+60
V
VBM
voltage on pin BM
no time limit
60
+60
V
Vtrt
transient voltage
on pins BM and BP
[1]
100
-
V
[2] -75
V
[3]
150
-
V
[4] -100
V
Tstg
storage temperature
55
+150
C
Tvj
virtual junction temperature
[5]
40
+150
C
VESD
electrostatic discharge voltage
HBM on pins BP and BM to ground
[6]
8.0
+8.0
kV
HBM at any other pin
[6]
4.0
+4.0
kV
MM on all pins
[7]
200
+200
V
CDM on all pins
[8]
1000
+1000
V



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