TJA1080ATSSLASH2SLASHT datasheet(33/49 Pages) NXP

33 / 49 page

TJA1080A

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 6 — 28 November 2012

33 of 49

NXP Semiconductors

TJA1080A

FlexRay transceiver

[1]

Current flows from VCC to VBUF. This means that the maximum sum current ICC + IBUF is 35 mA.

[2]

These values are based on measurements taken on several samples (less than 10 pieces). These measurements have taken place in

the laboratory and have been done at Tamb = 25 C and Tamb = 125 C. No characterization has been done for these parameters. No

industrial test will be performed on production products.

Ci(BM)

input capacitance on pin

not tested; with respect to all

other pins at ground;

VBM =100 mV; f = 5MHz

[2] -

Ci(dif)(BP-BM)

differential input

capacitance between

pin BP and pin BM

not tested; with respect to all

other pins at ground;

V(BM-BP) = 100 mV; f = 5 MHz

[2] -2

Pin INH1

VOH(INH1)

HIGH-level output

voltage on pin INH1

IINH1 = 0.2 mA

VBAT  0.8 VBAT  0.3 VBAT  0.1 V

IL(INH1)

leakage current on pin

INH1

Sleep mode

50

A

IOL(INH1)

LOW-level output

current on pin INH1

VINH1 = 0 V

15

5

1mA

Pin INH2

VOH(INH2)

HIGH-level output

voltage on pin INH2

IINH2 = 0.2 mA

VBAT  0.8 VBAT  0.3 VBAT  0.1 V

IL(INH2)

leakage current on pin

INH2

Sleep mode

50

A

IOL(INH2)

LOW-level output

current on pin INH2

VINH2 = 0 V

15

5

1mA

Pin WAKE

Vth(det)(WAKE)

detection threshold

voltage on pin WAKE

low power mode

2.5

4.5

IIL(WAKE)

LOW-level input current

on pin WAKE

VWAKE = 2.4 V for

t>twake(WAKE)

A

IIH(WAKE)

HIGH-level input current

on pin WAKE

VWAKE = 4.6 V for

t>twake(WAKE)

11

3

A

Temperature protection

Tj(warn)(medium)

medium warning

junction temperature

VBAT > 5.5 V

155

165

175

C

Tj(dis)(high)

high disable junction

temperature

VBAT > 5.5 V

180

190

200

C

Power-on reset

Vth(det)POR

power-on reset

detection threshold

voltage

3.0

3.4

Vth(rec)POR

power-on reset recovery

threshold voltage

3.1

3.5

Vhys(POR)

power-on reset

hysteresis voltage

100

200

Table 13.

Static characteristics …continued

All parameters are guaranteed for VBAT = 6.5 V to 60 V; VCC = 4.75 V to 5.25 V; VBUF = 4.75 V to 5.25 V; VIO = 2.2 V to 5.25 V;

Tvj = 40 C to +150 C; Rbus = 45 ; RTRXD = 200  unless otherwise specified. All voltages are defined with respect to

ground; positive currents flow into the IC.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TJA1080ATS/2/T Datasheet(PDF) 33 Page - NXP Semiconductors

TJA1080ATS/2/T Datasheet(HTML) 33 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49

Datasheet Download

Link URL