TJA1080ATSSLASH2SLASHT datasheet(44/49 Pages) NXP

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TJA1080A

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Product data sheet

Rev. 6 — 28 November 2012

44 of 49

NXP Semiconductors

TJA1080A

FlexRay transceiver

14. Appendix

14.1 EPL 3.0.1 requirements implemented in the TJA1080A

Table 17.

EPL 3.0.1 requirements implemented

EPL 3.0.1 parameter

Description

wake-up via dedicated data frames

RDCLoad

transmitter output voltage defined for DC bus load of 40

 to 55 /100 pF

dBDTx10, dBDTx01

transmitter delay:

 75 ns

uData0_LP

receiver thresholds for detecting DATA_0 in low-power modes:

400 mV (min) /

100 mV (max)

dBDRxai

idle reaction time: 50 ns to 275 ns

dBDActivityDetection

activity detection time 100 ns to 250 ns

dBDRxia

activity reaction time: 100 ns to 325 ns

uData1

 uData0

receiver threshold mismatch:

 30 mV

dBDRx10, dBDRx01

receiver delay:

 75 ns

dBusRx0BD, dBusRx1BD

minimum bit time: 70 ns

C_StarTxD, C_BDTxD

maximum input capacitance on pin TXD: 10 pF

BD_Off mode defined

short-circuit currents:

iBPBMShortMax,iBMBPShortMax

BP shorted to BM: < 60 mA; no time limit

iBPGNDShortMax,iBMGNDShortMax

BP/BM shorted to ground: < 60 mA; no time limit

iBP-5ShortMax,iBM-5ShortMax

BP/BM shorted to

5 V: < 60 mA; no time limit

iBPBAT48ShortMax,iBMBAT27ShortMax

BP/BM shorted to 27 V: < 60 mA; no time limit

iBPBAT48ShortMax,iBMBAT27ShortMax

BP/BM shorted to 48 V: < 72 mA; no time limit

iBPBAT60ShortMax,iBMBAT60ShortMax

BP/BM shorted to 60 V: < 90 mA; for 400 ms (max)

dBDRVCC

VCC undervoltage recovery time: 10 ms (max)

uINH1Not_Sleep

voltage drop from VBAT to INH: 1 V @ 200 A and VBAT  5.5 V

iINH1Leak

leakage current, when INH is floating:

 A

qualification according to AEC-Q100 temperature classes

uESDExt

6 kV ESD (min) on pins BP and BM according to HBM (100 pF/1500

)

uESDInt

2 kV ESD (min) on all other pins according to HBM (100 pF/1500

)

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